Structural and Electrical Properties of Vanadium Tungsten Oxide Thin films

摘要：

The V1.8W0.2O5 thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size in V1.8W0.2O5 thin films with different annealing temperature. It was found that the dielectric properties and TCR properties of V1..8W0.2O5 thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V1.8W0.2O5 thin films annealed at 400 ℃ were 38, with a dielectric loss of 0.13, respectively. Also, the TCR values of the V1.8W0.2O5 thin films annealed at 400℃ were about -3.15％/K.

作者: Sung-Pill Nam Sung-Gap Lee Seon-Gi Bae Young-Hie Lee

作者单位: Department of Ceramic Engineering, Gyeongsang National University, Jinju KOREA Department of Electric Engineering, University of Incheon, Incheon, KOREA Department of Electrical Meterials Engineering, Kwangwoon University, Seoul, Nowon-Gu Wolgye-Dong 44

会议类型: 国际会议

会议名称: The International Conference on Electrical Engineering 2009(2009 电机工程国际会议)

会议地点: 沈阳

会议语种:英文

页码: 1-4

在线出版日期: 2009-07-05（万方平台首次上网日期，不代表论文的发表时间）