Fabrication of Cu2ZnSnS4 thin films by sulfurization process from quaternary compound for photovoltaic device applications
(0) Cu2ZnSnS4 thin films were fabricated by sulfurization of the precursor which was evaporated from quaternary compound on Mo/soda lime glass substrate. The sulfurization temperature was varied from 400℃ to 560℃. These samples were characterized by means of X-ray fluorescence analysis, electron probe microanalysis, X-ray diffraction and scanning electron microscopy. XRD studies showed that the thin film sulfurized at 560℃ had a kesterite Cu2ZnSnS4 structure with a single phase and the preferred orientation to the 112 plane. The full width at half maximum of 112 peak in XRD patterns decreased with increasing the annealing temperature. EPMA analysis showed that Zn and Sn content had nearly stoichiometric composition and Cu content was slightly rich. SEM images demonstrated that the grain size in Cu2ZnSnS4 thin films increased with increasing the annealing temperature.
Cu2ZnSnS4 thin film solar cell sulfurization
T. Yamaguchi T. Kubo K. Maeda S. Niiyama T. Imanishi A. Wakahara
Department of Electrical and Computer Engineering, Wakayama College of Technology, 77 Noshima, Nada- Industrial Technology Center of Wakayama Prefecture, 60 Ogura, Wakayama 649-6261, Japan Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarig
国际会议
The International Conference on Electrical Engineering 2009(2009 电机工程国际会议)
沈阳
英文
1-4
2009-07-05（万方平台首次上网日期，不代表论文的发表时间）