Switching effect of Ag doped chalcogenide thin films
In the present works, we investigate the resistance change characteristics with the frequency, the temperature and the applied electric field direction on Ag/As40Ge10Se15S35 chalcogenide thin film structure for PMC (Programmable Metallization Cell). , Tg of a bulk sample used in this experiment was measured by DSC (Differential Scanning Calorimetry) with increasing the temperature,5℃/min in Pt crucible. As the results of resistance change with the temperature which rose from 20℃ to 300℃, the resistance was abruptly dropped from the initial resistance of 1.3 MΩ to the saturated value of ～400 . at 203℃. On the other hand, the resistance increased to 1.3 MΩ at 219℃, when the temperature reduced from 300℃ to 20℃. The estimated resistance ratio was approximately 3000 times.
Ki-Hyun Nam Jae-Hoon Kim Hong-Bay Chung
Department of Electrical Meterials Engineering, Kwangwoon University, Seoul, Nowon-Gu Wolgye-Dong 447-1 KOREA
国际会议
The International Conference on Electrical Engineering 2009(2009 电机工程国际会议)
沈阳
英文
1-4
2009-07-05（万方平台首次上网日期，不代表论文的发表时间）