Silicon Condenser Microphone Fabricated on SOI Wafer
A silicon condenser microphone on an SOI (silicon on insulator) substrate using only 0one photo mask was fabricated. This microphone consists of a diaphragm with the thickness of 20 μm and the diameter of 2 mm, a SiO2 insulative spacer (4 μm thick buried oxide), and a 450 μm-thick silicon back plate with the meshed structures having extremely small (60 μm) hexagonal shaped acoustic holes. The gap between the 20 μm thick silicon diaphragm and the back plate is 4 μm, which is determined by the thickness of the buried oxide in the SOI wafer. This microphone was confirmed to function as a static pressure sensor. The SOI microphone was also connected to an amplifier circuit, and exposed to the sound pressure of 110 dB at the frequency of 1 k Hz. The microphone clearly responded to the input sound, and the output ac voltage of approximately 40 μV was detected.
MEMS Silicon Condenser microphone
S. Hishinuma Y. Kumai K. Oku D. Irokawa E. Sugizaki N. Watanabe T. Ikehara R. Maeda Y. Nishioka
College of Science and Technology, Nihon University, 7-24-1 Narashinodai, Funabashi-shi, Chiba 274-8 Networked MEMS Technology Group Advanced Manufacturing Research Institute, National Institute of Adv
国际会议
The International Conference on Electrical Engineering 2009(2009 电机工程国际会议)
沈阳
英文
1-5
2009-07-05（万方平台首次上网日期，不代表论文的发表时间）