The Study of Boron-doped Nanocrystalline Silicon Film with High Conductivity
Boron-doped nanocrystalline silicon film was prepared through plasma enhanced chemical vapor deposition (PECVD) on silicon substrate and glass substrate under the high deposition pressure (332.5-399Pa) and the high deposition temperature (320-360℃). The film was investigated by Raman, electron probe microanalyser, conductivity and mobility experimenting techniques. The conductivity of the boron-doped nanocrystalline silicon film was 2.97×102Ω-1cm-1. The results showed that the interface between the film and the silicon substrate might have quantum spot and small size effect, causing the increasing of conductivity.
Nanocrystalline Silicon Film Boron-doped High Conductivity
Hao LIU Weijia ZHANG Shiliang JIA Wei GUO Jin WU
Center of Condensed Matter and Materials Physics, Beihang University, Haidian District, Beijing
国际会议
重庆
英文
367-371
2008-06-09（万方平台首次上网日期，不代表论文的发表时间）