Deposition and Characterization of GaN Films on ITO Glass Substrates by PECVD

摘要：

The GaN film deposited on ITO glass substrate by PECVD was characterized using XPS, SEM and reflectance spectra. XPS analysis indicated that the chemical status of the film surface was predominated in mixture phase of GaN and Ga2O3. The film annealed at 400℃ exhibited platelet-shaped and hexagonal structure and c-plane textured morphology. The reflectance spectra show that the absorption cutoff wavelength of the sample annealed at 400 ℃ was broadened to 1100nm roughly. It is concluded that the GaN film grown on ITO glass substrate by PECVD will be a promising full spectra material.

关键词： GaN film ITO Glass Substrate PECVD

作者: Jinshe YUAN Guohao YU Changmin YANG Mingyue WANG

作者单位: Department of physics, Chongqing Normal University, Chongqing 400047, China Department of applied physics, Xian University of Technology, Xian 710048, China

会议类型: 国际会议

会议名称: 2008年中美材料国际研讨会

会议地点: 重庆

会议语种:英文

页码: 446-449

在线出版日期: 2008-06-09（万方平台首次上网日期，不代表论文的发表时间）