Study on 1/ f γ Noise Characterization of Metallic Interconnection Electromigration

摘要：

1/ f γ noise was used to characterize damage degree of Al thin film electromigration in this paper. The results showed both noise amplitude and frequency exponent increased during electromigration process, and when void nucleation occured, frequency exponent increased sharply. 1/ f γ noise can also reflect electromigration degree under different environment temperature. Through comparing with resistance, 1/ f γ noise can be proved a better characterization parameter for electromigration.

关键词： Al interconnection Electromigration 1/ f γ noise

作者: Liang HE Lei DU Yiqi ZHUANG

作者单位: School of Technical Physics, Xidian University, Xian 710071, China School of Microelectronics, Xidian University, Xian 710071, China

会议类型: 国际会议

会议名称: 2008年中美材料国际研讨会

会议地点: 重庆

会议语种:英文

页码: 521-525

在线出版日期: 2008-06-09（万方平台首次上网日期，不代表论文的发表时间）