Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

摘要：

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

关键词： AlxGa1-xN Band-gap Bowing Parameter Lattice Strain Lattice Mismatch

作者: Lan ZHAO Zhengxiong LU Caijing CHENG Degang ZHAO Jianjun ZHU Baojuan SUN Bo QU Xiangfeng ZHANG Weiguo SUN

作者单位: Luoyang Optoelectronic Institute, Luoyang, China Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Jordan Valley Semiconductors UK Ltd., Belmont, Durham, UK

会议类型: 国际会议

会议名称: 2008年中美材料国际研讨会

会议地点: 重庆

会议语种:英文

页码: 598-603

在线出版日期: 2008-06-09（万方平台首次上网日期，不代表论文的发表时间）