Fabrication and Properties of Large-areaSilicon Nanowire Arrays

摘要：

Wet chemical etching with dry metal deposition method has been developed to fabricate large-area aligned silicon nanowire (SiNW) arrays. The combination of nanoclusters Ag film with proper interconnection and interspaces (of about 20 nm thick), and proper temperature during etching (from 20 to 80 ℃) is vital to successfully fabricating large-area uniform SiNW arrays. Raman and photoluminescence spectra of the SiNW arrays indicated their potential applications in chemical detection and optical devices ,respectively.

关键词： Silicon Nanowire Arrays Dry Metal Deposition Wet Chemical Etching Raman Photoluminescence

作者: Hui FANG Yin WU Jing ZHU

作者单位: Beijing National Center for Electron Microscopy, Tsinghua University, Beijing 100084, China Laboratory of Advanced Materials, Department of Materials Science and Engineering,Tsinghua University, Beijing 100084, China

会议类型: 国际会议

会议名称: 2008年中美材料国际研讨会

会议地点: 重庆

会议语种:英文

页码: 604-609

在线出版日期: 2008-06-09（万方平台首次上网日期，不代表论文的发表时间）