Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition

摘要：

A two-dimensional mathematical model for deposition behavior of SiC coating on C/C composites in a hot-wall CVD reactor was developed. Deposition rate of SiC was calculated by finite element method and optimized by using an orthogonal L9(3)4 test. The single and coupling effects of process parameters on deposition rate of SiC, including deposition temperature, the flux of mixed gases, the volume ratio of H2 and Ar, and that of MTS and mixed gases, were calculated and discussed. The optimal deposition rate of SiC was obtained.

关键词： Finite Element Simulation Chemical Vapor Deposition Deposition Rate Orthogonal Design SiC Coating

作者: Guodong SUN Hejun LI Shouyang ZHANG Qiangang FU Wei CAO Yanqiong JIAO

作者单位: C/C composites Technology Research Center, Northwestern Polytechnical University, Xian 710072, China

会议类型: 国际会议

会议名称: 2008年中美材料国际研讨会

会议地点: 重庆

会议语种:英文

页码: 635-640

在线出版日期: 2008-06-09（万方平台首次上网日期，不代表论文的发表时间）