Functionality of Ti-O Thin Films Doped by Phosphorus: Wettability, Semiconductor Performance and Blood Compatibility
For an application as biomedical materials of high performance with a good biocompatibility, the Ti-O film on Si (110) wafer substrate has been synthesize by means of unbalance reactive magnetron sputtering method and modified by phosphorus ion implantation and succeeding vacuum annealing. X-ray diffraction (XRD) results indicated that such prepared Ti-O film had a rutile structure. X-ray photoelectron spectroscopy (XPS) analysis demonstrates the effect of P ion doping. The contact angle test and sheet resistance results showed that titanium oxide film and phosphorus-doped titanium oxide film became more hydrophilic and higher conductance after annealing. The morphology and roughness of the surface have been investigated using SEM. Antithrombotic property of the titanium oxide thin film was examined by platelet adhesion tests. The results showed that the undoped Ti-O films and the P implant and annealing at 900 ℃ Ti-O film had good blood compatibility.
Phosphorus Ion Implantation Wettability Semiconductor Blood Compatibility
Jinbiao WANG Ping YANG Guicai LI Zhonghai YANG Yongxiang LENG Hong SUN Nan HUANG
Key Lab. Of Advanced Technology for Materials of Education Ministry, Southwest Jiaotong University, Chengdu, Sichuan, China
国际会议
重庆
英文
1017-1021
2008-06-09（万方平台首次上网日期，不代表论文的发表时间）