Silicon-Containing Vinyl Ether Resists for Nanoimprint Lithography
A series of novel silicon-containing vinyl ether resists were prepared for nanoimprint lithography. The silicon-containing vinyl ethers have the hybrid curing properties, which means that they contain both cationic polymerizable vinyl group and radical polymerzable vinyl group. The silicon-containing divinyl ether monomers (Ⅲ) were synthesized by the addition reaction of glycidyl vinyl ether (GVE) with various silyl dichlorides. GVE was synthesized by 2, 3-epoxyproqanol with ethyl vinyl ether using palladium acetate-1, 10-phenanthroline as a catalyst. Then Ⅲ with Methacrylic acid were carried out using TBAC as a catalyst to afford silicon-containing multifunctional monomer with both vinyl ether and methacrylate groups(Ⅳ). The effects of each material on the imprint properties, such as viscosity and dry-etching resistance, were evaluated. And the photopolymerization of these monomers proceeded smoothly in bulk using either a cationic photoinitiator such as a sulfonium salt or a radical photoinitiator such as acyl phosphine oxide under UV irradiation. Formulations based on the several synthesized materials were made to find the optimum composition among them in terms of the required properties for the nanoimprinting and the following processes.
silicon-containing vinyl ether formulation nanoimprint lithography
Fang Yuan Zou Yingquan
College of Chemistry, Beijing Normal University Beijing, P.R.China College of Chemistry, Beijing Normal University Beijing, P.R.China
国际会议
The 31st International Congress on Imaging Science(第31届国际影像科学大会 ICIS2010)
北京
英文
406-408
2010-05-12（万方平台首次上网日期，不代表论文的发表时间）