Poly(3-hezylthiophene)-Based Field-Effect Transistors with Silsesquiozane Gate Insulators

摘要：

We have developed polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with high resistivity and smooth surface morphology. We have also developed novel functional polysilsesquioxane gate insulator materials with a high-dielectric constant, photolithographic property, and hydrophobic surface by changing the chemical structure. Top-contact organic thin-film transistors (OTFTs) are fabricated on the PMSQ insulators using poly(3-hexyl)thiophene as an organic semiconductor to demonstrate the usefulness of the PMSQ as a gate insulator for OTFTs.

作者: Kenji Tomatsu Takashi Hamada Takashi Nagase Saori Yamazaki Takashi Kobayashi Shuichi Murakami Kimihiro Matsukawa Hiroyoshi Naito

作者单位: Department of Physics and Electronics, Osaka Prefecture University,1-1 Gakuen-cho, Naka-ku, Sakai 59 Department of Physics and Electronics, Osaka Prefecture University,1-1 Gakuen-cho, Naka-ku, Sakai 59 Technology Research Institute of Osaka Prefecture, 2-7-1 Ayumino,Izumi, Osaka 594-1157, Japan Innova Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8533, Japan Inn

会议类型: 国际会议

会议名称: The 31st International Congress on Imaging Science(第31届国际影像科学大会 ICIS2010)

会议地点: 北京

会议语种:英文

页码: 743-746

在线出版日期: 2010-05-12（万方平台首次上网日期，不代表论文的发表时间）