NANOIONIC SUPERCAPACITORS FOR DEEP-SUBVOLTAGE NANOELECTRONICS AND NEW TECHNOLOGIES
The decrease of energy consumption per 1 bit processing (ε) and power supply voltage (Vdd) of the CMOS integrated circuits (ICs) are long term tendencies in micro-and nanoelectronics. Deep-sub-voltage nanoelectronics, i.e. ICs of～1011-1012 cm-2 component densities operating near the theoretical limit of ε, is sure to find application in the next decade. The demand on micron size capacitors with high value of capacitance density (δc) sharply increases with decreasing technological norms, εand Vdd. However, conventional sub-voltage capacitors have no technological reserve for a significant increase of δc. Therefore, the development of new class of all-solid state micron-sized impulse supercapacitors on the base of advanced superionic conductors (AdSICs) was initiated. The experimental data for prototype nanoionic supercapacitors with δc.100 μF/cm2 are presented and some new nanoionic basics are discussed. The prospect of nanoelectronicsnanoionics is briefly outlined.
ALEXANDER DESPOTULI ALEXANDRA ANDREEVA
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences (RAS Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences, Che
国际会议
The 12th Asian Conference on Solid State Ionics(第十二届亚洲固态离子学会议暨第十五届中国固态离子学会议)
武汉
英文
404-415
2010-05-02（万方平台首次上网日期，不代表论文的发表时间）