Effects of nitrogen content on structure and electrical properties of nitrogen-doped fluorinated diamond-like carbon films
Nitrogen-doped fluorinated diamond-like carbon (FN-DLC) films were prepared on single crystal silicon substrate by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) under different deposited conditions with CF4,CH4 and nitrogen as source gases.The influence of nitrogen content on the structure and electrical properties of the films was studied.The films were investigated in terms of surface morphology,microstructure,chemical composition and electrical properties.Atomic force microscopy (AFM) results revealed that the surface morphology of the films became smooth due to doping nitrogen.Fourier transform infrared absorption spectrometry (FTIR) results showed that amouts of C=N and CN bonds increased gradually with increasing nitrogen partial pressure r (r=p(N2)/p(N2+CF4+CH4)).Gaussian fit results of C 1s and N 1s in X-ray photoelectron spectra (XPS) showed that the incorporation of nitrogen presented mainly in the forms of β-C3N4 and a-CNx (x=1,2,3) in the films.The current-voltage (I-V) measurement results showed that the electrical conductivity of the films increased with increasing nitrogen content.
fluorinated diamond-like carbon films nitrogen doping structure electrical properties
XIAO Jian-rong LI Xin-hai WANG Zhi-xing
School of Metallurgical Science and Engineering,Central South University,Changsha 410083,China;Depar School of Metallurgical Science and Engineering,Central South University,Changsha 410083,China
国际会议
2009 Frontier Symposium of China Postductors on Materrials Science(2009年中国博士后材料科学前言论坛)
长沙
英文
1551-1555
2009-11-22（万方平台首次上网日期，不代表论文的发表时间）