In-Situ and Ez-Situ Measurements on Silicon Thin Films Fabricated by Ezcimer Laser Annealing

摘要：

The phase transitions occurring at the surface of amorphous silicon and a-Si/SiO2 interface of the sample during XeF excimer laser annealing has been investigated by non-intrusive in-situ real-time optical reflectivity and transmissivity measurements with nanosecond time resolution. Five distinct regimes were demonstrated on the basis of various excimer laser fluences. The structural transformation scenario of silicon films based on the recrystallization mechanism is proposed to interpret the formation of the grain microstructure. The exsitu microstructural characterizations of excimer laser-irradiated region as a function of various excimer laser energy densities were characterized by scanning electron microscopy and micro-Raman scattering measurements. A super-lateral growth length of approximately 1μm was obtained in a 90-nm-thick a-Si film by a single excimer laser pulse without any substrate heating. Micro-Raman scattering measurements as a function of various excimer laser energy densities were also carried out.

作者: Chil-Chyuan Kuo Wen-Chang Yeh Ji-Feng Lee Jeng-Ywan Jeng

作者单位: Department of Mechanical Engineering, National Taiwan University of Science and Technology No. 43, K Department of Electronic Engineering, National Taiwan University of Science and Technology, Taiwan, Department of Mechanical Engineering, National Taiwan University of Science and Technology No. 43, K

会议类型: 国际会议

会议名称: 第四届仪器科学与技术国际会议( 4th International Symposium on Instrumentation and Science and Tcchnology)

会议地点: 哈尔滨

会议语种:英文

页码: 937-944

在线出版日期: 2006-08-08（万方平台首次上网日期，不代表论文的发表时间）