Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering
Gallium-doped zinc oxide (GZO) transparent conductive thin films were deposited on glass substrate by RF magnetron sputtering using a ceramic ZnO target with 10 wt. % Ga2O3 doped. The effects of substrate temperature on structural, electrical and optical properties of the films were investigated. X-ray diffraction (XRD) measurements indicated that GZO films were polycrystalline and strongly c-axis oriented. The surface roughness evaluated in terms of Rrms measured by atomic force microscope (AFM) was 1.8 nm for the smoothest surface obtained at 250 ℃. The electrical resistivity decreases with increasing substrate temperature and the lowest resistivity obtained was 5.8×10-4 Ω·cm at 350 ℃. The average transmittance in the visible region was over 90%. The carrier concentration increased with substrate temperature increasing, and the highest mobility value was 22.1 cm2v-1·s-1.
Shufang Wang Xifeng Li Jianhua Zhang
Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University
国际会议
The 8th China International Nanoscience and Technology Symposium(2009第八届中国国际纳米科技湘潭研讨会Cinsts09)
湖南湘潭
英文
1-6
2009-10-23（万方平台首次上网日期，不代表论文的发表时间）