Semiconductor nanostructure growth and device application

摘要：

Most new concept quantum devices are based on semiconductor nanostructures.Quantum dots (QDs) and quantum wells (QWs) are basic units of semiconductor nanostructures.Here we report issues related to molecular-beam epitaxial (MBE) growth of QD and QW structures. The evolution of InAs/(In) GaAs wetting layer (WL) and QD is disclosed by using reflectance difference spectroscopy (RDS) and atomic force microscopy (AFM ) technique.Controlled growth of high performance of quantum dot lasers and quantum dot super luminescent diodes are achieved.By proper using the strain technique,strain-compensated In_x Ga_1-xAs/In_yAl_1-yAs quantum cascade laser (QCL) materials are grown.Room temperature continuous wave operation of QCLs with A λ≈7.4 and 4.6 μm are presented.

作者: WANG Z.G. LIU F.Q. CHEN Y.H. XU B. JIN P. WU J.

作者单位: Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

会议类型: 国际会议

会议名称: The 10th China-Russia System on Advanced Materials and Technologies(第十届中俄新材料新工艺研讨会)

会议地点: 浙江嘉兴

会议语种:英文

页码: 46-49

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）