Magnetic tunnel junction in the current-in-plane geometry:Magnetoresistance;photovoltaic effect
The magnetic tunnel structure La0.7Sr0.3MnO3/depleted manganite layer/MnSi was fabricated using pulsed-laser deposition. The depleted manganite layer serves as a potential barrier between the ferromagnetic conducting La0.7Sr0.3MnO3and MnSi layers by form ing a magnetic tunnel junction. The study in the CIP (current-in-plane) geometry has revealed the effect of current channel switching be tween the manganite layer and the manganese silicide layer with higher conductivity. The effect is controlled by bias current,magnetic field,and optical radiation. They influence on tunneling curriers across potential barrier divided two conducting layers and,consequent 13,,on the current switching process.Driven switching is responsible for the features of the transport properties and the magnetoresistive and phctovoltaic effects in the structure.
N.V.Volkov E.V.Eremin G.S.Patrin P.D.Kim
Kirensky Institute of Physics SB RAS,Krasnoyarsk,660036 Russia Siberian Federal University,Institute Siberian State Aerospace University,Institute of Space Technology,Krasnoyarsk,660014 Russia Kirensky Institute of Physics SB RAS,Krasnoyarsk,660036 Russia
国际会议
The 10th China-Russia System on Advanced Materials and Technologies(第十届中俄新材料新工艺研讨会)
浙江嘉兴
英文
170-173
2009-10-20（万方平台首次上网日期，不代表论文的发表时间）