Preparation and properties of copper nitride thin film

摘要：

Copper nitride thin films were deposited on SiO2/Si substrates by modified ion beam enhanced deposition method (IBED).High purity copper was used as sputtering target and the PCVAr+ mixed ion beam implanted into the deposited films during the sputtering of copper. The relationship between the film composition and the preparation condition was discussed.Polycrystalline Cu3N film with a preferred (210) orientation was obtained.Measured by means of nanoindentation system,microhardness (H) of the deposited Cu3N films is about 10.7 CPa and the elastic modulus (E) is approximately 118.7 GPa,both of which are higher than that prepared by magne tron sputtering method.

关键词： copper nitride thin film IBED electrical and mechanical properties

作者: YUAN Ningyi LI Feng DING Jianning WANG Xiuqin

作者单位: Research Center of Low-Dimensional Materials,Nano-Micro Devices and System,Jiangsu Polytechnic University,Changzhou 213164,China

会议类型: 国际会议

会议名称: The 10th China-Russia System on Advanced Materials and Technologies(第十届中俄新材料新工艺研讨会)

会议地点: 浙江嘉兴

会议语种:英文

页码: 427-430

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）