Interdiffusion in strained-Si/SiGe heterostructure on a bonded SOI wafer

摘要：

High resolution X-ray diffractometry (HRXRD) has been utilized to investigate the thermally treated Si/SiGe heterostructure on a bonded SOI wafer. The lattice parameter of the Si capping layer and the underlying si layers (the Si buffer layer and SOI top Si lay er) is directly measured using high resolution reciprocal lattice mapping (HRRLM). The results show that the unstrained lattice parame ters of the underlying Si layers are larger than that of the bulk Si substrate. It is deduced that Ge atoms diffuse out from the SiGe layer in to the underlying Si layers.Misfit dislocations (MDs) are observed in the SiGe layer and the underlying Si layers by high resolution trans mission electron microscopy (HRTEM).It is argued that interdiffusion enables MDs to glide out of the lower interface of the SiGe layer and then form dislocation dipoles.

关键词： interdiffusion HRRLM misfit dislocations HRTEM

作者: MA Tongda TU Hailing

作者单位: General Research Institute for Non-Ferrous Metals,Beijing 100088,China

会议类型: 国际会议

会议名称: The 10th China-Russia System on Advanced Materials and Technologies(第十届中俄新材料新工艺研讨会)

会议地点: 浙江嘉兴

会议语种:英文

页码: 496-498

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）