Application of interface engineering methods to CVD growth of thin tungsten films on silicon substrate

摘要：

The interface modeling,thermodynamic considerations and study of the self-organization phenomenon of reaction zone are ap plied to optimization of chemical vapour deposition (CVD) of thin tungsten films on silicon substrate-perspective materials for multilay ered contact metallization of integrated circuits.It was shown that the formation of selflimited nanoscale W,Si,silicide sublayer and low energy coherent interfaces in the W-film/W5 si3-sublayer/Si (001)-substrate heterosysystem in non equilibrium CVD-method are results of the system internal self-organization.Based on interface design methods a procedure to fabricate by CVD stable tungsten thin films of high-conductivity (8×10-6 Ohm·cm)and high adhesion was developed.

作者: A.V.Andreeva S.V.Plyushcheva

作者单位: Institute of Microelectronics Technology and High-Purity Materials,Russian Academy of Sciences,Chernogolovka,Moscow Region 142432,Russia

会议类型: 国际会议

会议名称: The 10th China-Russia System on Advanced Materials and Technologies(第十届中俄新材料新工艺研讨会)

会议地点: 浙江嘉兴

会议语种:英文

页码: 499-502

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）