Silicide nanostructured multilayers in monocrystalline silicon matriz:growth,structure and properties
Studies of nanosize (5-30 run) island formation of Fe and Cr silicides on Si (111)7x7 and Si(100)2 x 1 surfaces,silicon growth atop nanosize silicide islands and multilayer repetition of developed growth procedure for all silicides have been carried out. Opti mization of growth parameters has permitted to create monolithic multilayer heteronanostructures with buried nanocrystals (NC) of iron and chromium disilicides.It was firstly shown that p-FeSi2iand crSi2 NC (5-30 run) are elastically embedded in silicon lattice due to introduction of tension in the NC lattice and silicon lattice around NC without formation of misfit dislocations on the interface. Optical properties and electrical properties of multilayer heteronanostructures have been studied and device perspectives have been discussed.
N.G.Galkin D.L.Goroshko K.N.Galkin E.A.Chusovitin V.0.Polyarnyi
Institute of Automation and Control Processes FEB RAS,690041,Vladivostok,Russia,Radio Str.,5
国际会议
The 10th China-Russia System on Advanced Materials and Technologies(第十届中俄新材料新工艺研讨会)
浙江嘉兴
英文
585-588
2009-10-20（万方平台首次上网日期，不代表论文的发表时间）