A new approach for 6H-SiC synthesis by self-propagating high temperature synthesis method

摘要：

The formation of 6H-SiC from the SiO2+Mg+C system with different amount of submicrometer size 6H-SiC seed crystals un der the argon pressure was investigated utilizing combustion synthesis technique.It was shown that without 6H-SiC seed crystals combus tion reaction leads to (3-SiC-3C phase formation with a small amount of 4H-SiC.Introduction of 6H-SiC crystals into green mixture stimu lated the formation of 6H-SiC and continuous growth of its concentration from k was found.Finally single phase 6H -SiC was obtained when concentration of seed reaches 20 wt.% -25 wt.% No residual Si could be detected in the final products. The size of as synthesized SiC particles have a shape close to be crystalline and a size about 0.5-1 μm.

关键词： 6H-SiC seed crystals SHS combustion temperature crystallization

作者: HOU Y.B. ZENG K.L. ZHAN J. BAO J.F. JI G.J. WON C.W.

作者单位: Beijing General Research Institute of Mining & Metallurgy,Beijing 100044,China Rapidly Solidified Materials Research Center (RASOM),Chungnam National University Yuseong,Daejeon,30

会议类型: 国际会议

会议名称: The 10th China-Russia System on Advanced Materials and Technologies(第十届中俄新材料新工艺研讨会)

会议地点: 浙江嘉兴

会议语种:英文

页码: 774-777

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）