A Switched-reset 300e ENC 10mW readout ASIC in 180nm CMOS for CdZnTe Particle Detector

摘要：

A 18Onm CMOS front-end readout circuit for CdZnTe particle detector with tens of pF capacitance is presented.It uses switched-reset system and 4th-order complex pole semi-gaussian shaper. The input MOSFET is optimized with the consideration of the properties of deep submicron technologies and the limitation of power dissipation. And a swing reduction technique is used on the switch signal to improve the parasitic effects. The post-layout simulation result shows that the readout ASIC has about a 300e ENC at 20pF detector capacitance and 10mW power dissipation.

关键词： particle detection readout circuit switched-reset deep submicron CMOS

作者: Xiangyu LI Xinguang CHEN Qi ZHANG Yihe SUN

作者单位: Institute of Microelectronics,Tsinghua University and Tsinghua National Laboratory for Information Science and Technology,Beijing,100084 China

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 305-308

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）