A Low Breakdown-voltage Charge Pump based on Cockcroft-Walton Structure

摘要：

A Cockcroft-Walton type charge pump circuit is proposed in this paper.Compared with Dickson type, each transistor and capacitor in the proposed circuit just stand against the voltage less than one Vdd,so that a low break-down voltage process can be applied to this kind of charge pump to reduce the chip area cost and break-down risk.By using the proposed structure,the performances of voltage boosting efficiency and power efficiency can reach 98.9% and 87%.

关键词： Cockcroft-Walton type breakdown voltage boosting efficiency power efficiency

作者: Renyuan Zhang Zhangcai Huang Yasuaki Inoue

作者单位: Graduate School of Information,Production and Systems,Waseda University,Kitakyushu-Shi,808-0135,Japa Fukuoka Industry,Science & Technology Foundation (Fukuoka IST),Fukuoka-Shi,814-0001,Japan Graduate S

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 328-331

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）