A New Layout Method to Improve the Thermal Stability of Multi-finger Power HBT

摘要：

A new layout method to improve the thermal stability of Multi-finger Power heterojunction bipolar transistors(HBT) is presented in this paper.In the new layout the through-wafer-via is inserted into the central of the Multi finger Power HBT and the emitter fingers were connected by a wide metal layer that was exactly on the active thermal emitter area. According to the experimental results of a 8 fingers GaAs power HBT,the new layout method with compare to the routine layout method can reduce the thermal resistance from 242℃/W to 163℃/W and expand the thermal stability power density from 0.76mW/μm2 to 1.14 mW/μm2. And also the radio frequency(RF) gain loss of the power HBT due to the thermal effect was suppressed with the improvement of the thermal stability.

关键词： Heterojunction Bipolar Transistor Power Thermal stability

作者: Y.Chen H.Shen X.Liu

作者单位: school of Information Science and Engineering,Shan Dong University,Jinan 250100 China Institute of Microelectronies of Chinese Academy of Science,Beijing 100029 China

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 344-346

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）