Millimeter-wave CMOS Circuits for a High Data Rate Wireless Transceiver
This paper presents millimeter-wave CMOS building blocks for a high date rate wireless transceiver. The results include measured data for a 40-50 GHz broad-band low noise amplifier,a 40 GHz tuned power amplifier,and an 18 GHz voltage controlled oscillator. Also,simulation results for a 22 GHz multi-modulus prescaler is presented for implementing phase locked loop. The circuits were fabricated 0.13 μm CMOS process. The measured results showed good agreement with simulation data demonstrating good modeling accuracy of CMOS active and passive devices for millimeter wave applications.
CMOS millimeter-wave wireless transceiver modeling
Tai Nghia Nguyen Seong-Gwon Lee Sang-Hyun Hwang Jong-Wook Lee Byung-Sung Kim
School of Electronics and Information,Kyung Hee University,Suwon,446-701,Korea Information and Communication Engineering,Sungkyunkwan University,Suwon,440-746,Korea
国际会议
2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)
长沙
英文
461-464
2009-10-20(万方平台首次上网日期,不代表论文的发表时间)