Analysis Technique for Systematic Variation over Whole Shot and Wafer at 45nm Process Node

摘要：

We propose a test structure for systematic variation measurement over the whole shot and wafer area at a 45 nm process node.With this structure,we found that the systematic variation had two kinds of site dependence,one is a wafer scale and the other is a shot scale component. Additionally,the Die-to-Die and Within-Die variations for any chip size are calculated Then,the systematic variation component has the correlation length more than 16mm. This shows that it is necessary to take into consideration the Within-Die variation according to the Die size.

关键词： Device variation test structure for systematic variation measurement analysis of Within-Wafer Within-Die and Die-to-Die variation

作者: Jingo Nakanishi Hiromi Notani Yasunobu Nakase Hirofumi Shinohara

作者单位: design and development unit,Renesas Technology Corporation,Itami,Hyogo 664-0005,Japan

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 585-588

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）