A Compact Analytical Model for Multi-Island Single Electron Transistors

摘要：

Multi-island single electron transistor (SET) has become a promising candidate for the kernel device of the logic circuit in the near future. A novel compact analytical model for multi-island SET is proposed in terms of current. The new approach is based on the orthodox theory of single electron tunnelling and steady-state master equation. The model is accurate and fast compared with SIMON,and suitable for the ASIC design of multi-island SET circuit simulation.

关键词： single electron transistor multi-island analytical model

作者: Yaqing Chi Bingcai Sui Liang Fang Hailiang Zhou Haiqing Zhong He Sun

作者单位: National Laboratory for Parallel and Distributed Processing,School of Computer,National University of Defense Technology,Hunan,410073,China

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 662-665

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）