Modeling of Layout-dependent STI Stress in 65nm Technology

摘要：

In this work,we investigate the impact of layout shapes on STI stress.Based on a stress simulator developed by us,we propose analytical models to correlate the STI stress and the layout parameters. Our model is validated by data collected from a commercial 65nm process. The experimental results prove that the device characteristics predicted by our model closely match the measured data.

关键词： STI stress layout-dependent model 65nm technology

作者: Ji-ying Xue Yang-dong Steve Deng Zuo-chang Ye Liu Yang Zhi-ping Yu

作者单位: Institution of Microelectronics,Tsinghua University,Beijing,100084,China

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 670-673

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）