Quantum-Mechanical Study on the Electron Effective Mobility of Surrounding-Gate nMOSFETs

摘要：

As metal-oxide-semiconductor field-effect transistors (MOSFETs) down scaling progresses into the nanometer regime,quantum mechanical effects are becoming more and more significant.In this work, a model for the surrounding-gate (SG) nMOSFET is developed. The Schr(ǒ)dinger equation is solved analytically and some of the results are verified via simulations.We find that the percentage of the electrons with a lighter conductivity mass increases as the temperature decreases,or as the gate voltage reduces. These imply that low temperature and low gate voltage will enhance the electron effective mobility,which is good for the device performance.

关键词： Metal-Ozide-Semiconductor Field-Effect-Transistor Quantum-Mechanical Study Mobility

作者: Guang-Xi Hu Ran Liu Ting-Ao Tang Ling-Li Wang Zhi-Jun Qiu

作者单位: State Key Laboratory of ASIC & System,School of Microelectronics,Fudan University Shanghai 200433,P.R.China

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 792-795

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）