High-reliable multi-level Phase Change Memory with Bipolar Selectors

摘要：

This paper proposed a novel 2B2R (two bipolar transistors& two phase change resistors) cell structure and a ratio-based state definition scheme for 3-value N-doped Ge2Se2Te5 phase change memory,and realized high density and high reliable phase change storage.

关键词： Phase change memory multilevel storage 2B2R

作者: Le Xu Yufeng Xie Yinyin Lin

作者单位: State Key Laboratory of ASIC & System (Fudan University),Research Center of Semiconductor Memory and Application,Fudan University,Shanghai,201203,PRC

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 1011-1014

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）