Improved Thermal Stability of Power SiGe Heterojunction Bipolar Transistor with Novel Emitter Structure

摘要：

A novel segmented emitter structure with nonuniform finger length and spacing has been presented to alleviate adverse thermal effects in multi-finger siGe HBT power device.Considering the various thermal resistances of different components for the segmented multi-finger HBT,an appropriate thermal model is developed.Using this model,the thermal simulation for a ten-finger power SiGe HBT with segmented emitter structure is performed and the three diraensional temperature distribution on emitter fingers is obtained.Compared with traditional emitter structure, the maximum junction temperature reduce significantly from 416.3K to 405K,the thermal resistance reduce from 154.67K/W to 140K/W,thus the thermal stability of improved structure is enhanced apparently.

关键词： Heterojunction bipolar transistors silicongermanium segmented emitter thermal stability

作者: Ning Hu Wan-rong Zhang Liang Chen Lu Huang Yi-wen Huang

作者单位: College of Electronic Information and Control Engineering Beijing University of Technology(BJUT),Bei College of Electronic Information and Control Engineering,BJUT,Beijing,100124,China

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 1027-1030

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）