Investigation into Trap-assisted Tunneling Drain Leakage Current in NMOSFETs

摘要：

The impact of hot carrier stress on drain leakage current becomes more severe in ultra-deep sub micron NMOSFETs. The mechanisms and characteristics of trap-assisted tunneling drain leakage current(ITAT) degradation are investigated Both interface trap and oxide trapped charge are analyzed. The experimental results show that the hot carrier stress makes ITAT degradation have a strong dependence on the oxide thickness.In thin gate oxide (3.84nm) NMOSFETs,ITAT degradation is attributed mostly to interface trap creation,while in thicker oxide (7. 64nm) NMOSFETs,ITAT exhibits two stages degradation,a power law degradation rate in the initial stage due to interface trap generation,followed by an accelerated degradation rate in the second stage caused by oxide trapped charge creation.

关键词： NMOSFETs interface trap-assisted tunneling drain leakage current band-band tunneling hot carrier

作者: Xing Dezhi Liu Hongxia Li Kaicheng

作者单位: National Labs of Analog Integrated Circuits and Sichuan Institute of Solid-state Circuits,Nanan,Cho department of Microelectronics,Xidian University,Xian,Shaanxi 710071 China Sichuan Institute of Solid-state Circuits,Nanan,Chongqing 400060 China

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 1031-1034

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）