Negative Differential Regime free LIGBT utilizing Resistance-Controlled-Anode

摘要：

A new structure of shorted-anode LIGBT entitled Resistance Controlled Anode (RCA) LIGBT is proposed and analyzed in order to eliminate the Negative Differential Regime (NDR) by introducing another two buffer resistances utilizing SIMOX technology.Simulation results show that the NDR regime is eliminated completely at L2=0.4μm without sacrificing the silicon area,forward voltage drop and the breakdown voltage.Simulation results also show that the switching speed of the proposed RCA-LIGBT is reduced at least by 50% compared to the conventional LIGBT.

关键词： NDR Power device SA-IGBT RCA-LIGBT

作者: Gang Xie Wensuo Chen Bo Zhang Zhaoji Li

作者单位: State key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic science and Technology of China,No.4,Section 2,North Jianshe road,Chengdu,china,610054

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 1055-1057

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）