A Low Spur Charge Pump in 0.35μm SiGe Process for PLL

摘要：

The operation,design and measurement of a charge pump in a 0.μm Si e process are presented. Measurements show,within the operating frequency range of .Hz to.Hz,that the charge pump achieves a less than 0.mismatch between the source and sin current over the output voltage range of 0.To 2. At power voltage., and the reference spur is below-dBc. The charge pump is used in an integer-PLL for WCDMA applications.

关键词： Charge pump integer-N pll reference spurs mismatch phase noise

作者: Song Ye Lingling Wu Yang Yu uan Wu Shuailin Zhou Shoulong Tang

作者单位: Chengdu University of Information Technology,24 Block 1,uefu Road,Chengdu P.R.China 610225 BroadGalaxy Electronics Technology Inc.,40 Nanchang Road,Nanjing,210037,P.R.China BroadGalaxy Electronics Technology Inc

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 1070-1073

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）