Stochastic Inductance Model of OTA-based Inductor
In this research,the effect of the stochastic nature of the bias current to the inductance of the OTA-based inductor has been explored and modeled as the corresponding Probability Density Function,PDF which the complete probabilistic distribution information can be obtained. This research has been performed based upon cMOS technology. The derived model has been found to provide a sufficient accuracy due to the strong agreement between its corresponding calculated Cumulative Distribution Function,CDF and the measured one. The proposed model is promisingly applicable to the OTA-based inductor of any topologies constructed with any basis OTA. Hence,it has been found to be a convenience tool for the design of various applications of the OTA-based inductor. Furthermore,the conceptual idea behind this research is also applicable to any current controlled active inductor.
About four key words or phrases in order of importance separated by commas
Rawid Banchuin Rougsan Chaisrichatorn Boonruk Chipipop
Department of Computer Engineering,Siam University,Bangkok Thailand School of Information Technology,Meafahluang University,Chiangrai Thailand Department of Computer Engineering,King Mongkut University of Technology Thonburi,Bamgkok Thailand
国际会议
2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)
长沙
英文
1197-1200
2009-10-20（万方平台首次上网日期，不代表论文的发表时间）