Surface-Potential-Based Analysis of Bias-Dependent Series Resistance in LDD MOSFET

摘要：

A surface-potential-based analysis to calculate the overlap,resistance in LDD MOSFET is presented in this paper. The gate and drain bias is automatically included in this calculation which is compatible with current surfacepotential-based MOS model. The results prove that this model has good accuracy,but with much less complexity compared with already reported ones.

关键词： LDD series resistance overlap region surface potential

作者: Lei Chen Ling-Ling Sun Jun Liu

作者单位: Key Laboratory for RF Circuits and Systems of Ministry of Education,Hangzhou Dianzi University,Hangzhou 310018 China

会议类型: 国际会议

会议名称: 2009 IEEE 8th International Conference on ASIC(第八届IEEE国际专用集成电路大会)

会议地点: 长沙

会议语种:英文

页码: 1244-1246

在线出版日期: 2009-10-20（万方平台首次上网日期，不代表论文的发表时间）