Microstructure and Piezoelectric Properties of PZTbased Ternary Perovskite Pb(Mn,Nb)O3-PZT Thin Films
Single crystal thin films of the PZT-based ternary perovskite, xPb(Mn,Nb)O3-(1-x)PZT, were fabricated by a magnetron sputtering on (001)MgO substrates. The sputtered thin films were quenched in air after the deposition. The PZTbased thin films exhibited the hard ferroelectric behavior with high piezoelectric coupling factors kt, kt=70%, measured at GHz range FBAR structure. The PZT-based thin films showed a high mechanical quality factor Qm, ,Qm=185. The observed kt and Qm are, to our knowledge, the highest in the reported values. The achievement of the high Qm will be owed to the single crystal-like high density film structure with the doped Mn acceptors and oxygen vacancies achieved by the sputtering deposition followed by the quenching. The figure of merit kt 2Qm is almost the same to piezoelectric AlN thin films. It is confirmed the quenched PZTbased ternary perovskite thin films have a potential for a fabrication of FBAR and/or wide band filters at GHz range.
PMnN-PZT Thin films Single crystal GHzFBAR
K. Wasa N. Yamauchi T. Shirai T.Ueda T. Matsushima K.Nishida T.Yamamoto I. Kanno H. Kotera
Dept.of Micro-engineering,Kyoto University,Sakyouku,Kyoto,606-5081 Japan Panasonic Electric Works,Ltd.,Osaka 571-8686,Japan National Defense Academy,Yokosuka,Japan
国际会议
西安
英文
189-193
2009-08-23（万方平台首次上网日期，不代表论文的发表时间）