Effect of Two-Steps RTA on the Properties of PSTT5 Thin Films

摘要：

0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 (PSTT5) ferroelectric thin films have been prepared by RF magnetron sputtering on LSCO/Pt/Ti/SiO2/Si(100) substrates. A new two-steps rapid thermal annealing (TSRTA) was developed. TSRTA and conventional rapid thermal annealing (CRTA) were both used to anneal PSTT5 thin films. The XRD patterns shows that the PSTT5 thin films annealed by TSRTA would form pure perovskite structure and show highly (220) oriented. The ferroelectric measurements indicate that the PSTT5 thin films annealed by TSRTA possess better ferroelectric property. The 2Pr of the PSTT5 thin films annealed by TSRTA can be 25.4μC/cm2.

关键词： RF magnetron sputtering PSTT5 thin films RTA

作者: Yucheng Sun Xuedong Li Yuanyuan Zhou Haimin Li Jiliang Zhu Hong Liu Ying Pei Dingquan Xiao Jianguo Zhu

作者单位: College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China Department of P

会议类型: 国际会议

会议名称: 2009 The 18th IEEE International Symposium on Applications of Ferroelectrics(2009年国际铁电学暨IEEE国际铁电应用联合会议)

会议地点: 西安

会议语种:英文

页码: 210-213

在线出版日期: 2009-08-23（万方平台首次上网日期，不代表论文的发表时间）