High-Frequency Dielectric Study Of Multiferroic Bi0.9La0.1Fe0.9Mn0.1O3 Thin Films

摘要：

La- and Mn-doped multiferroic BiFeO3 thin films were fabricated and characterized at radio- and microwave frequencies using the parallel-plate capacitor structures at a room temperature. A single phase epitaxial-quality thin films were grown by RF sputtering on SrTiO3(100) substrate with highly conductive SrRuO3 and Ti/Au layers used as bottom and top electrodes. In the frequency range 40 MHz-30 GHz the Bi0.9La0.1Fe0.9Mn0.1O3 (BLFMO) films show relatively low losses and dielectric constant value close to 90. Analysis of the frequency dependences of loss tangent shows power law 1/3 with estimated value of microwave loss tangent less than 0.06 at frequencies below 20 GHz. We assume that the oxygen vacancies in the thin film act as charged defects and cause extrinsic microwave losses.

作者: R. Sobiestianskas B. Vengalis J. Banys

作者单位: Faculty of Physics,Vilnius University,Sauletekio 9,Vilnius,10222,Lithuania Semiconductor Physics Institute,Gostauto 14,Vilnius,01108,Lithuania

会议类型: 国际会议

会议名称: 2009 The 18th IEEE International Symposium on Applications of Ferroelectrics(2009年国际铁电学暨IEEE国际铁电应用联合会议)

会议地点: 西安

会议语种:英文

页码: 232-235

在线出版日期: 2009-08-23（万方平台首次上网日期，不代表论文的发表时间）