Electrical and optical characteristics of High Power Vertical GaN Light-Emitting Diodes on Si Substrates

摘要：

High power vertical GaN-based light-emitting diodes (LEDs) on Si substrates are fabricated by wafer bonding and laser lift-off (LLO) technique. The GaNbased LEDs are grown on sapphire (0001) substrates by metalorganic chemical vapour deposition (MOCVD). GaNbased LEDs are joined to Si receptor substrates by sn/Au fusion bonding at the temperature of 300 C in flowing nitrogen ambient. KrF excimer laser with 400mJ/cm energy density is used to irradiate GaNbased LEDs from transparent sapphire substrates to separate the samples from sapphire,forming GaN-based LEDs/Sn/Au/Si structure. Using the samples grown on the same wafer,the electrical and optical characteristics of the GaN-based LEDs on sapphire and on Si are investigated. At 20mA,the forward voltages of GaN-based LEDs on Si and sapphire are 3.1V and 3.3V respectively. At high operation current 110mA,the I-V characteristic of vertical strcture GaN-based LEDs on Si can be improved much more greatly. The light output power of GaN-based LEDs on si keeps increasing up to 560mA without any power saturation.

关键词： LLO wafer bonding MOCVD LED GaN.

作者: Ting Wang Zhanzhong Cui Lixin Xu

作者单位: School of Mechatronic Engineering,Beijing Institute of Technology 5 South Zhongguancun Street,Haidian District,100081 Beijing,China

会议类型: 国际会议

会议名称: 2009 9th International Conference on Electronic Measurement & Instruments(第九届电子测量与仪器国际会议 ICEMI2009)

会议地点: 北京

会议语种:英文

页码: 1299-1302

在线出版日期: 2009-08-16（万方平台首次上网日期，不代表论文的发表时间）