Determination of Capacitance of DRAM Capacitor as Encountering Roll-Off Problems

摘要：

There has been trouble in measuring larger-area DRAM capacitors, especially at higher frequency. Somehow, different area size capacitors are supposed to have the same capacitance per unit area due to the reliable and repeatable process technology. A model using an algorithm based on Metal- InsulatorSemiconductor (MIS) structure is to be developed to understand the reasons why roll-off problems of measurements take place as the frequency gets higher and the areas of capacitors get larger. It is then found that the common unit capacitance C(1 0), 1.1255E-5 nF/μm(2), of various size capacitors with 100(A) Ta(2) O(5) dielectric corresponds to the effective SiO(2) thickness, 30.5 A.

关键词： High frequency measurement Roll-off capacitance

作者: Hsinchia Yang

作者单位: Minghsin University of Science and Technology 30401,Taiwan China

会议类型: 国际会议

会议名称: 2009 9th International Conference on Electronic Measurement & Instruments(第九届电子测量与仪器国际会议 ICEMI2009)

会议地点: 北京

会议语种:英文

页码: 3813-3816

在线出版日期: 2009-08-16（万方平台首次上网日期，不代表论文的发表时间）