Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices

摘要：

An optimal variation in lateral doping profiles is proposed for the drift region of lateral power devices in partial SOI technology in order to achieve breakdown voltage above 200V for both off-state and on-state operations. LDMOS structure incorporating the proposed optimal doping profile are analyzed for their electrical characteristics and compared with conventional uniformly doped partial SOI and thin layer SOI by extensive 2D numerical simulations using MEDICI. The results indicate that the proposed optimal doping profile is in good agreement with the optimal doping gradient for JI technology. The optimal doping profile can significantly improve the trade-off between breakdown voltage and specific onresistance in comparison to uniformly doped P-SOI.

关键词： SOI Breakdown voltage variation of lateral doping LDMOS.

作者: Shaoming Yang Wenchin Tseng Gene Sheu

作者单位: Department of Computer Science and Information Engineering,Asia University,Taichung,Taiwan,China

会议类型: 国际会议

会议名称: 2009 9th International Conference on Electronic Measurement & Instruments(第九届电子测量与仪器国际会议 ICEMI2009)

会议地点: 北京

会议语种:英文

页码: 3822-3825

在线出版日期: 2009-08-16（万方平台首次上网日期，不代表论文的发表时间）