AN ACCURATE LARGE-SIGNAL MODEL FOR RF SOI LDMOS INCLUDING SELF-HEATING EFFECT
An accurate RF SOI LDMOS large-signal equivalent circuit model based on NXP MOS Model 20 (MM20) is presented. The avalanche effect and the power dissipation caused by self-heating are described. The RF parasitic elements are extracted directly from measured S-parameters with analytical methods. Then their final values are obtained quickly and accurately through necessary optimization. The model is validated in DC, AC small-signal, and large-signal analyses for an RF SOI LDMOS of 20-fingers (channel mask length, L=1μm, finger width, W=50μm) gate with high resistivity substrate and body-contact. Excellent agreement is achieved between simulated and measured results for DC, S-parameters (10MHz~20.01GHz), and power characteristics, which shows our model is accurate and reliable. MM20 is improved for RF SOI LDMOS large-signal applications. This model has been implemented in Verilog-A using the ADS circuit simulator (hpeesofsim).
SOI LDMOS large-signal model MOS Model 20 harmonic power Verilog-A
Huang Wang Lingling Sun Zhiping Yu Jun Liu
Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzh Institute of Microelectronics, Tsinghua University, Beijing 100084, China
国际会议
北京
英文
1-6
2008-09-26（万方平台首次上网日期，不代表论文的发表时间）