ACCUMULATION-MODE AND INVERSION-MODE TRIPLE-GATE MOSFETS
This work analyzes the performance of very narrow triple-gate SOI MOSFETs on the basis of experimental and 3D simulation data. Short channel effects (SCEs) are quite reduced in those devices due to the good electrostatic control by the surrounding gate and the high Lg/Wfin ratio. The experimental data indicate that SCEs of accumulation-mode (AM) triple gate devices are comparable to those observed in inversion-mode (IM) devices down to a gate length of 50 nm. This makes AM triple gate (or more generally, multi-gate) MOSFETs interesting devices for digital applications.
Multigate FET FinFET SOI MOSFETs 3D simulation Short channel effects Accumulation-mode
R. Yan A. Afzalian C.-W. Lee N. Dehdashti Akhavan W. Xiong J.-P. Colinge
Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland Texas Instrument Inc, SiTD, Dallas TX USA
国际会议
北京
英文
1-4
2008-09-26（万方平台首次上网日期，不代表论文的发表时间）