Effects of InN phase separantion on the 2DEG in InzGa1-zN/GaN QWs with Si3N4 passivation

摘要：

Recently InxGa1-xN/GaN heterostructures and quantum wells(QWs) have gained immense importance in the application of III-V nitride materials. In this work, the Si3N4 layer on the InxGa1-xN/GaN QWs with InxGa1-xN of various In molar fractions(x) is suggested, and the 2-dimensional electron gas(2DEG) in the phase separante InxGa1-xN layer with Si3N4 layer passivation are described. We have used the simulation program one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D) to simulate the QWs design and study the 2DEG performances. In the paper we have discussed the effects of different scheme, different Si3N4 layer thickness and the different In molar fractions(x) on the 2DEG performances.

作者: K.X.Zhang A.B.Ma L.Y.Zhang W.H.Zhu X.F.Wang B.Wan

作者单位: College of Materials Science and Engineering,HoHai University,Nanjing 210098,China;College of Scienc College of Materials Science and Engineering,HoHai University,Nanjing 210098,China College of Science,HoHai University,Nanjing 210098,China

会议类型: 国际会议

会议名称: Third Asia-Pacific International Conference on Computational Methods in Engineering(第三届亚太国际工程中计算方法学术会议暨第九届全国工程中边界元、无网格等数值方法学术会议)(ICOME 2009)

会议地点: 南京

会议语种:英文

页码: 1

在线出版日期: 2009-10-18（万方平台首次上网日期，不代表论文的发表时间）