Minimum Sample Size Determination for V-Ramp GOI Qualification: Eztending the Methods in JEDEC/FSA Joint Publication

摘要：

The V-Ramp test is an important test for GOI (Gate Oxide Integrity) of MOS devices.The criterion for a product under GOI qualification is to meet the requirement with defect density lower than a target defect density (D0).This paper studies the methods and guidelines in minimum sample size determination provided by JEDEC/ FSA joint publication and points out their drawbacks,inconsistency, and misguidance.We provide an exact method and easy-to-use numerical solution by extending JEDECs formula to any allowed failure number, target defect density, and confidence level.Important guidelines are also provided for reliability practitioners to reduce uncertainty resulted from imperfect sampling procedures and to avoid mistakes commonly happened in defect density evaluation against a target D0.Our proposed exact method can be applied on many other reliability tests that need determining a minimum sample size to save wafers and testing resources as long as the binomial distribution is applicable.

关键词： Minimum Sample Size V-Ramp Test GOI (Gate Ozide Integrity) Defect Densigy Random Sampling Binomial Distribution Confidence Bounds

作者: Siyuan Frank Yang Kary Wci-Ting Chicn

作者单位: Corporate Quality and Reliability SMIC Shanghai,China

会议类型: 国际会议

会议名称: 2009 8th International Conference on Reliability,Maintainability and Safety(第八届中国国际可靠性、维修性、安全性会议)

会议地点: 成都

会议语种:英文

页码: 46-48

在线出版日期: 2009-08-24（万方平台首次上网日期，不代表论文的发表时间）