Through Silicon Via Filling by Copper Electroplating in Acidic Cupric Methanesulfonate Bath

摘要：

Copper electrodeposition in acidic cupric methanesulfonate bath with organic additives is discussed in this paper. The influence of poly(ethylene glycol) (PEG) and bis-(3-sodiumsulfopropyl disulfide) (SPS) on copper deposition were studied by means of linear sweep voltammetry, cyclic voltammetry and chronoamperometry. These electrochemical analysises revealed a competition of PEG and SPS on electrode surface site. The swiftness of SPS chemisorption and the subsequent displacement by the passivating film of PEG exerted an extra wave at small overpotential on the negative-going sweep. The following polarization curve indicated the firmness of the passivating film. All these features of additives in acidic cupric methanesulfonate bath suggested a novel method to achieve superconformal or bottom-up filling which was proved by actual TSV plating.

作者: Qi Li Huiqin Ling Haiyong Cao Zuyang Bian Ming Li Dali Mao

作者单位: Lab of Microelectronic Materials & Technology, State Key Laboratory of Metal Matrix Composites, Scho Sinyang Semiconductor Material Co., Ltd., 1268 Wenhe Road, Shanghai, China Lab of Microelectronic Materials & Technology, State Key Laboratory of Metal Matrix Composites, Scho

会议类型: 国际会议

会议名称: 2009 International Conference on Electronic Packaging Technology & High Density Packaging(2009 电子封装技术与高密度集成技术国际会议)

会议地点: 北京

会议语种:英文

页码: 68-72

在线出版日期: 2009-08-10（万方平台首次上网日期，不代表论文的发表时间）